TSMC advances its RF frontend technology portfolio with best-in-class 12-inch 40RFSOI technology.
40RFSOI platform is optimized for RF Frontend module (RF FEM) with the integration of low noise amplifiers (LNAs) and RF switches to enable compact and power efficient RF FEM designs in 5G (sub-6 GHz) mobile, IoT and wireless communications applications.
40RFSOI delivers outstanding performance over our own 8-inch 0.13RFSOI with 24% performance improvement in RF switch and 20% power reduction in LNA. In addition, the new platform features High fT (cut off frequency) to carry out low power and high intrinsic gain for LNA, low Ron*coff device and trapping layer in SOI substrate to provide good signal integrity and low insertion loss for RF switch. Both components can be integrated on the same high resistivity substrate to achieve chip scaling.
These improvements are designed to overcome the complexity of RF requirements for today’s wireless communications applications, including growing number of frequency bands, mixed RF signals, and system integration.